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  inchange semiconductor isc product specification isc silicon pnp power transistor TIP36D description dc current gain- : h fe = 25(min)@i c = -1.5a collector-emitter sustaining voltage- : v ceo(sus) = -120v(min) complement to type tip35d current gain-bandwidth product- : f t = 3.0mhz(min)@i c = -1.0a applications designed for use in general purpose power amplifier and switching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage -160 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -continuous -25 a i cm collector current-peak -40 a i b b base current -5 a p c collector power dissipation@ t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor TIP36D electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -30ma; i b = 0 -120 v v ce (sat)-1 collector-emitter saturation voltage i c = -15a; i b = -3a -2.5 v v ce (sat)-2 collector-emitter saturation voltage i c = -25a; i b = -6.25a -5.0 v v be (on)-1 base-emitter on voltage i c = -15a; v ce = -4v -2.0 v v be (on)-2 base-emitter on voltage i c = -25a; v ce = -4v -4.0 v i ceo collector cutoff current v ce = -90v; i b = 0 b -1.0 ma i ces collector cutoff current v ce = -160v; v be = 0 -0.7 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -1.5a; v ce = -4v 25 h fe-2 dc current gain i c = -15a; v ce = -4v 8 f t current-gain?bandwidth product i c = -1a ; v ce = -10v; f test = 1.0mhz 3 mhz switching times t on turn-on time 1.2 s t off turn-off time i c = -15a; i b1 = -i b2 = -1.5a; v be( off ) = -4.15v; r l = 2 0.9 s isc website www.iscsemi.cn


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